InAlGaN/GaN HEMTs at Cryogenic Temperatures
نویسندگان
چکیده
منابع مشابه
Enhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview
Enhanced performances of 111-V field effects transistors are generally expected at cryogenic temperatures thanks to the better confinement and the velocity of carriers. An overview of our recent work on ultrashort gate-length HEMTs on GaAs and InP substrates at low temperature is presented in this paper. The compared behavior of the devices and the relative enhancement or degradation of their l...
متن کاملRefractive Index of ZnSe at Cryogenic Temperatures†
This report describes an extensive data set on the refractive index of ZnSe that provides full high resolution coverage of the CRIRES operating range in both wavelength and temperature. By combining our prototype instrument model of CRIRES with these data our project to provide wavelength calibration for IR Echelle spectrographs (WIRE) has reached an important milestone and is ready to support ...
متن کاملModeling and Characterization of In0.12al0.88n/gan Hemts at Elevated Temperatures
Promising material properties of GaN, e.g., wide bandgap, high saturation velocity, and high thermal stability, make it an excellent material for high-power, high-frequency, and high-temperature applications. For some specific applications which require the device to operate at elevated temperatures, modeling and simulation provide very meaningful insights about the thermal device behavior. In ...
متن کاملStudy of Secondary Electron Emission from Niobium at Cryogenic Temperatures
...................................................................................................................... iii LIST OF FIGURES ............................................................................................................ v LIST OF TABLES............................................................................................................. ix ACKNOWLEDGEMENTS.......
متن کامل[1011] Scanning Thermal Microscopy on 2D Materials at cryogenic temperatures
Thermal transport in Graphene is of great interest due to its high thermal conductivity, for both fundamental research and future applications such as heat dissipation in electronic devices. Although, the thermal conductivity of graphene can reduce depending on the coupling to the substrate [1]. In this work, we report high-resolution imaging of nanoscale thermal transport in single and few lay...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2016
ISSN: 2079-9292
DOI: 10.3390/electronics5020031